Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator-Reference-Cited by-同舟云学术

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Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator

Published:2011-01-03 Issue:1 Volume:98 Page:012111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fang Hui,Madsen Morten,Carraro Carlo,Takei Kuniharu,Kim Ha Sul,Plis Elena,Chen Szu-Ying,Krishna Sanjay,Chueh Yu-Lun,Maboudian Roya,Javey Ali

Funder

National Science Foundation

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3537963

Reference16 articles.

1. Integrated nanoelectronics for the future

2. Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications

3. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

4. Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates

5. Ultrathin Silicon Circuits With Strain-Isolation Layers and Mesh Layouts for High-Performance Electronics on Fabric, Vinyl, Leather, and Paper

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