The initial stages of ZnO atomic layer deposition on atomically flat In0.53Ga0.47As substrates-Reference-Cited by-同舟云学术

The initial stages of ZnO atomic layer deposition on atomically flat In0.53Ga0.47As substrates

Published:2018 Issue:24 Volume:10 Page:11585-11596
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Skopin Evgeniy V.¹²³⁴,Rapenne Laetitia¹²³⁴,Roussel Hervé¹²³⁴,Deschanvres Jean-Luc¹²³⁴^ORCID,Blanquet Elisabeth¹²³⁴,Ciatto Gianluca⁵⁶⁷⁴,Fong Dillon D.⁸⁹¹⁰¹¹,Richard Marie-Ingrid¹²²¹³¹⁴⁴^ORCID,Renevier Hubert¹²³⁴^ORCID

Affiliation:

1. Univ. Grenoble Alpes

2. CNRS

3. F-38000 Grenoble

4. France

5. Synchrotron SOLEIL - Beamline SIRIUS

6. L’ Orme des Merisiers

7. Saint-Aubin

8. Materials Science Division

9. Argonne National Laboratory

10. Argonne

11. USA

12. Aix-Marseille Université

13. Université de Toulon

14. F-13397 Marseille

Abstract

Growth per cycle. Visualizing the fabrication of a ZnO ultra-thin layer at the very early stage of ZnO ALD on InGaAs substrate, before the 3D growth mode begins.

Funder

Agence Nationale de la Recherche

Fondation Nanosciences

Basic Energy Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR02440E

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1. Moore's law: past, present and future