Langmuir probe analysis of distributed electron cyclotron resonance silicon nitride deposition plasma
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120608
Reference15 articles.
1. Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method
2. Low Temperature Deposition of SiO2 by Distributed Electron Cyclotron Resonance Plasma‐Enhanced Chemical Vapor Deposition
3. Low temperature deposition of silicon nitride films by distributed electron cyclotron resonance plasma‐enhanced chemical vapor deposition
4. Electrical properties of metal–insulator–semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance
5. Optimized SiO2/InP structures prepared by electron cyclotron resonance plasma
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4. Characteristics of two-electron-temperature in inductively coupled CF4 plasmas;Acta Physica Sinica;2004
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