Optimized SiO2/InP structures prepared by electron cyclotron resonance plasma
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363120
Reference18 articles.
1. Control of compound semiconductor–insulator interfaces by an ultrathin molecular-beam epitaxy Si layer
2. Improved Si3N4/Si/GaAs metal‐insulator‐semiconductor interfaces by in situ anneal of the as‐deposited Si
3. Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma
4. Low‐temperature deposition of silicon dioxide films from electron cyclotron resonant microwave plasmas
5. Effects of Applied Magnetic Fields on Silicon Oxide Films Formed by Microwave Plasma CVD
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1. Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process;Materials Science Forum;2012-01
2. Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces;Journal of Applied Physics;2011-04-15
3. Growth of SiO2 on InP substrate by liquid phase deposition;Applied Surface Science;2010-04
4. Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111);physica status solidi (c);2009-02-13
5. Photoluminescence characterization of Al/Al2O3/InP MIS structures passivated by anodic oxidation;Semiconductor Physics, Quantum Electronics and Optoelectronics;2004-12-16
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