Low Temperature Deposition of SiO2 by Distributed Electron Cyclotron Resonance Plasma‐Enhanced Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Low Temperature Deposition of SiO2 by Distributed Electron Cyclotron Resonance Plasma‐Enhanced Chemical Vapor Deposition

Published:1992-05-01 Issue:5 Volume:139 Page:1489-1495
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Plais F.¹²³⁴,Agius B.¹²³⁴,Abel F.¹²³⁴,Siejka J.¹²³⁴,Puech M.¹²³⁴,Ravel G.¹²³⁴,Alnot P.¹²³⁴,Proust N.¹²³⁴

Affiliation:

1. Institut Universitaire de Technologie, Université Paris Sud (XI), Plateau du Moulon, BP127, 91403 Orsay Cedex, France

2. Groupe de physique des Solides, Universités Paris VI et Paris VII, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France

3. Alcatel SDG, PAE Les Glaisins, BP69, 74009 Annecy Cedex France

4. Thomson‐CSF LCR, Domaine de Corbeville, 91404 Orsay Cedex, France

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2069437/pdf

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