Improved GaN materials and devices through confined epitaxy-Reference-Cited by-同舟云学术

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Improved GaN materials and devices through confined epitaxy

Published:2007-04-16 Issue:16 Volume:90 Page:162101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Eddy C. R.,Holm R. T.,Henry R. L.,Twigg M. E.,Bassim N. D.,Shirey L. M.,Glembocki O. J.,Culbertson J. C.,Perkins F. K.,Peckerar M. C.,Ngu Y.,Yan F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2724773

Reference14 articles.

1. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

2. Anisotropic epitaxial lateral growth in GaN selective area epitaxy

3. Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

4. Pendeoepitaxy of gallium nitride thin films

5. Minimizing threading dislocations by redirection during cantilever epitaxial growth of GaN

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy;APL Materials;2017-09

2. Approach for dislocation free GaN epitaxy;Journal of Crystal Growth;2010-10

3. Array of Two UV-Wavelength Detector Types;IEEE Transactions on Electron Devices;2010-06

4. Stark effect of donor impurity states in strained heterojunctions under pressure;Acta Physica Sinica;2008

5. Characteristics ofin situMg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps;Semiconductor Science and Technology;2007-09-07

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