Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy-Reference-Cited by-同舟云学术

Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy

Published:2017-09 Issue:9 Volume:5 Page:096109
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Shelton Christopher T.¹,Bryan Isaac¹,Paisley Elizabeth A.²,Sachet Edward¹,Ihlefeld Jon F.²,Lavrik Nick³^ORCID,Collazo Ramón¹,Sitar Zlatko¹,Maria Jon-Paul¹

Affiliation:

1. North Carolina State University, Raleigh, North Carolina 27607, USA

2. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

3. Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4993840

Reference24 articles.

1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

2. Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

3. The role of surface kinetics on composition and quality of AlGaN

4. Polar-on-nonpolar epitaxy

5. Smooth cubic commensurate oxides on gallium nitride

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