Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)-Reference-Cited by-同舟云学术

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Published:2000-12 Issue:1-4 Volume:221 Page:316-326
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hiramatsu Kazumasa,Nishiyama Katsuya,Onishi Masaru,Mizutani Hiromitsu,Narukawa Mitsuhisa,Motogaito Atsushi,Miyake Hideto,Iyechika Yasushi,Maeda Takayoshi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

2. Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy

3. Growth of GaN and $\bf Al_{0.2}Ga_{0.8}N$ on Patterened Substrates via Organometallic Vapor Phase Epitaxy

4. Selective-area regrowth of GaN field emission tips

5. Selective growth of gallium nitride layers with a rectangular cross‐sectional shape and stimulated emission from the optical waveguides observed by photopumping

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