Enhanced drift mobility under in‐plane conduction in doping‐modulated amorphous silicon multilayers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352939
Reference14 articles.
1. Persistent Photoconductivity in Doping-Modulated Amorphous Semiconductors
2. Metastable Non-Equilibrium Conductance States in Doping-Modulated a-Si:H Multilayers
3. Change in the optical‐absorption coefficient induced by optical modulation of the internal electric field in doping‐modulated amorphous silicon multilayers
4. Persistent photoconductivity in doping-modulated multilayers and compensated thin films of hydrogenated amorphous silicon
5. Excitation and temperature dependence of the photo-induced excess conductivity in doping-modulated amorphous silicon
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In-plane photoconductivity in amorphous silicon doping multilayers;Philosophical Magazine B;1996-10
2. Comprehensive numerical simulation of defect density and temperature-dependent transport properties in hydrogenated amorphous silicon;Physical Review B;1995-11-15
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