Comprehensive numerical simulation of defect density and temperature-dependent transport properties in hydrogenated amorphous silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.14586/fulltext
Reference52 articles.
1. Spin-dependent photoconductivity in undoped a-Si: H
2. Recombination processes ina-Si:H: Spin-dependent photoconductivity
3. Electron mobility-lifetime product and D° defect density in hydrogenated amorphous silicon
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