Limitations of a simplified dangling bond recombination model for a-Si:H
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3037235
Reference15 articles.
1. Electronic behaviors of the gap states in amorphous semiconductors
2. Recombination at dangling bonds and steady-state photoconductivity ina-Si:H
3. Statistics of the Recombinations of Holes and Electrons
4. Nonequilibrium Steady-State Statistics and Associated Effects for Insulators and Semiconductors Containing an Arbitrary Distribution of Traps
5. Comprehensive numerical simulation of defect density and temperature-dependent transport properties in hydrogenated amorphous silicon
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