Excitation and temperature dependence of the photo-induced excess conductivity in doping-modulated amorphous silicon
Author:
Affiliation:
1. a Department of Physics and the James Franck Institute , The University of Chicago , Chicago , Illinois , 60637 , U.S.A.
2. b Xerox PARC , 3333 Coyte Hill Road, Palo Alto , California , 94304 , U.S.A.
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818608239020
Reference26 articles.
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3. Dohler , G. H. 1983. Advances in Solid State Physics: Festkoerperprobleme, Edited by: Grosse , P. Vol. 23, 207Philadelphia: Heyden.
4. Tunable absorption coefficient in GaAs doping superlattices
5. On the mechanism of light‐induced effects in hydrogenated amorphous silicon alloys
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