Change in the optical‐absorption coefficient induced by optical modulation of the internal electric field in doping‐modulated amorphous silicon multilayers-Reference-Cited by-同舟云学术

Change in the optical‐absorption coefficient induced by optical modulation of the internal electric field in doping‐modulated amorphous silicon multilayers

Published:1990-05-15 Issue:10 Volume:67 Page:6476-6480
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Oheda Hidetoshi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.345122

Reference23 articles.

1. Resonant tunneling through amorphous silicon–silicon nitride double-barrier structures

2. Photothermal modulation spectroscopy of multilayered structures of amorphous silicon and amorphous silicon carbide

3. Electrical and Optical Properties of Crystals with “nipi-Superstructure”

4. Electron States in Crystals with “nipi-Superstructure”

5. Compositional and doping superlattices in III-V semiconductors

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1. In-plane photoconductivity in amorphous silicon doping multilayers;Philosophical Magazine B;1996-10

2. Photoluminescence in doping-modulated amorphous silicon multilayers;Philosophical Magazine B;1994-04

3. Enhanced drift mobility under in‐plane conduction in doping‐modulated amorphous silicon multilayers;Journal of Applied Physics;1993-04

4. Current–voltage characteristics under in‐plane conduction in doping‐modulated amorphous silicon multilayers;Journal of Applied Physics;1992-05-15

5. Spatial carrier separation evaluated with a relaxation time distribution in doping‐modulated amorphous silicon multilayers;Journal of Applied Physics;1991-05