As capture and the growth of ultrathin InAs layers on InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111309
Reference16 articles.
1. Growth of InGaAs/InP optical modulator structures by chemical beam epitaxy
2. In SituInterface Control of Pseudomorphic InAs/InP Quantum Well Structure Growth by Surface Photo-Absorption
3. Optimization of interfaces in arsenide–phosphide compounds grown by gas source molecular-beam epitaxy
4. Improvement of InP/InGaAs heterointerfaces grown by gas source molecular beam epitaxy
5. Formation of The Interface between InP and Arsenic Based Alloys by Chemical Beam Epitaxy
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1. Atomic diffusion and electronic structure in Al[sub 0.52]In[sub 0.48]P∕GaAs heterostructures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
2. Atomic diffusion and band lineups at In[sub 0.53]Ga[sub 0.47]As-on-InP heterointerfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
3. Stress evolution aspects during InAs/InP (001) quantum wires self-assembling;Microelectronics Journal;2004-01
4. Atomic layer diffusion and electronic structure at In[sub 0.53]Ga[sub 0.47]As/InP interfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
5. Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy;Physical Review B;2002-07-22
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