Growth of InGaAs/InP optical modulator structures by chemical beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107027
Reference12 articles.
1. Electric field dependence of optical absorption near the band gap of quantum-well structures
2. Quantum‐confined Stark effect in InGaAs/InP quantum wells grown by organometallic vapor phase epitaxy
3. Exciton electroabsorption at room temperature in InGaAs/InP multiquantum-well structures grown by atmospheric-pressure MOCVD
4. Ga0.47In0.53As/InP superlattices grown by chemical beam epitaxy: Absorption, photoluminescence excitation, and photocurrent spectroscopies
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparison of InGaAs(100) grown by chemical beam epitaxy and metal organic chemical vapor deposition;Applied Surface Science;2000-04
2. Quantum confined Stark effect near 1.5 μm wavelength in InAs0.53P0.47/GayIn1−yP strain-balanced quantum wells;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05
3. Observation of 1.5 μm quantum confined Stark effect in InGaAs/AlGaAs multiple quantum wells on GaAs substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-07
4. Molecular beam epitaxial growth of In0.65Ga0.35 As quantum wells on GaAs substrates for 1.5 μm exciton resonance;Journal of Crystal Growth;1994-08
5. As capture and the growth of ultrathin InAs layers on InP;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-07
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