Study of the atomic models of three donorlike defects in silicon metal‐oxide‐semiconductor structures from their gate material and process dependencies-Reference-Cited by-同舟云学术

Study of the atomic models of three donorlike defects in silicon metal‐oxide‐semiconductor structures from their gate material and process dependencies

Published:1984-03-15 Issue:6 Volume:55 Page:1525-1545
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sah Chih‐Tang,Sun Jack Yuan‐Chen,Tzou Joseph Jeng‐Tao

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.333411

Reference51 articles.

1. Surface Effects of Radiation on Transistors*

2. Photoemission of Electrons from Silicon into Silicon Dioxide

3. Effects of ionizing radiation on oxidized silicon surfaces and planar devices

4. Avalanche Injection of Electrons into Insulating SiO2 Using MOS Structures

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