H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells
Author:
Affiliation:
1. Imec, Kapeldreef 75, B-3001 Leuven, Belgium
2. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
Funder
Imec Industrial Affiliation Program
U.S. Department of Energy (Department of Energy)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4915946
Reference29 articles.
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2. Three-dimensional 4F2 ReRAM cell with CMOS logic compatible process
3. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
4. Conductive filament scaling of TaOx bipolar ReRAM for long retention with low current operation
5. S. Muraoka , T. Ninomiya , Z. Wei , K. Katayama , R. Yasuhara , and T. Takagi , Symp. VLSI Technol. Dig. Tech. Pap. 2013, 62.
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