Process-dependent defects in Si∕HfO2∕Mo gate oxide heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2435585
Reference13 articles.
1. Defect energy levels in HfO2 high-dielectric-constant gate oxide
2. Grazing-incidence small angle x-ray scattering studies of phase separation in hafnium silicate films
3. In situ low-angle x-ray scattering study of phase separation in initially mixed HfO2–SiO2 thin film interfaces
4. High temperature stability in lanthanum and zirconia-based gate dielectrics
5. Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO2 and silicon
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3. Oxygen Vacancy in Hafnia as a Blue Luminescence Center and a Trap of Charge Carriers;The Journal of Physical Chemistry C;2016-09-02
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