Oxygen Vacancy in Hafnia as a Blue Luminescence Center and a Trap of Charge Carriers-Reference-Cited by-同舟云学术

Oxygen Vacancy in Hafnia as a Blue Luminescence Center and a Trap of Charge Carriers

Published:2016-09-02 Issue:36 Volume:120 Page:19980-19986
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Gritsenko Vladimir A.¹²,Islamov Damir R.¹²,Perevalov Timofey V.¹²,Aliev Vladimir Sh.¹,Yelisseyev Alexander P.³,Lomonova Elena E.⁴,Pustovarov Vladimir A.⁵,Chin Albert⁶

Affiliation:

1. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Avenue, 630090 Novosibirsk, Russia

2. Novosibirsk State University, 2 Pirogov Street, 630090 Novosibirsk, Russia

3. Sobolev Institute of Geology and Mineralogy SB RAS, 3 Koptyug Avenue, 630090 Novosibirsk, Russia

4. Prokhorov General Physics Institute RAS, 38 Vavilov Street, 119991 Moscow, Russia

5. Ural Federal University, 19 Mira Street, 620002 Yekaterinburg, Russia

6. National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan

Funder

Russian Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b05457

Reference50 articles.

1. Application and electronic structure of high-permittivity dielectrics

2. High-K materials and metal gates for CMOS applications

3. Electronic properties of hafnium oxide: A contribution from defects and traps

4. Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory

5. Tunneling current from a metal electrode to many traps in an insulator

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