MoS2 on an amorphous HfO2 surface: An ab initio investigation-Reference-Cited by-同舟云学术

MoS2 on an amorphous HfO2 surface: An ab initio investigation

Published:2015-05-21 Issue:19 Volume:117 Page:194303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Scopel W. L.¹,Miwa R. H.²,Schmidt T. M.²^ORCID,Venezuela P.³

Affiliation:

1. Departamento de Física, Universidade Federal do Espírito Santo, Vitória, Brazil and Departamento de Ciências Exatas, Universidade Federal Fluminense, Volta Redonda, Rio de Janerio, Brazil

2. Instituto de Física, Universidade Federal de Uberlândia, Uberlândia, Minas Gerais, Brazil

3. Instituto de Física, Universidade Federal Fluminense, Niterói, Rio de Janerio, Brazil

Funder

CENAPAD-SP

CNPq

FAPEMIG

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4921058

Reference21 articles.

1. Band-gap transition induced by interlayer van der Waals interaction in MoS2

2. Single-layer MoS2 transistors

3. HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

4. Origin of then-type andp-type conductivity of MoS2monolayers on a SiO2substrate

5. Graphene on amorphous HfO2surface: Anab initioinvestigation

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