Band-gap transition induced by interlayer van der Waals interaction in MoS2-Reference-Cited by-同舟云学术

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Band-gap transition induced by interlayer van der Waals interaction in MoS2

Published:2011-07-06 Issue:4 Volume:84 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Han S. W.,Kwon Hyuksang,Kim Seong Keun,Ryu Sunmin,Yun Won Seok,Kim D. H.,Hwang J. H.,Kang J.-S.,Baik J.,Shin H. J.,Hong S. C.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.84.045409/fulltext

Reference28 articles.

1. Emerging Photoluminescence in Monolayer MoS2

2. Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

3. Two-dimensional atomic crystals

4. Band structure ofMoS2,MoSe2,andα−MoTe2:Angle-resolved photoelectron spectroscopy andab initiocalculations

5. Atomically ThinMoS2: A New Direct-Gap Semiconductor

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4. Enhanced Transport Parameters of Transition Metal Dichalcogenide-Based Double-Barrier Magnetic Tunnel Junction;Journal of Electronic Materials;2024-07-05

5. Efficient photoanode with a MoS₂/TiO₂/Au nanoparticle heterostructure for ultraviolet-visible photoelectrocatalysis;Nanotechnology;2024-07-03

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