Tungsten-incorporation induced red-shift in the bandgap of gallium oxide thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4803802
Reference21 articles.
1. Anisotropy of electrical and optical properties in β-Ga2O3 single crystals
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3. Multicolor-emitting thin-film electroluminescent devices using Ga2O3 phosphors co-doped with Mn and Cr
4. Incorporation, valence state, and electronic structure of Mn and Cr in bulk single crystal β–Ga2O3
5. Oxygen sensing at high temperatures using Ga2O3 films
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