Structure, surface/interface chemistry and optical properties of W-incorporated β-Ga2O3 films made by pulsed laser deposition

Author:

Sanchez Francelia12,Das Debabrata13,Episcopo Nathan13,Manciu Felicia S.4,Tan Susheng5ORCID,Shutthanandan Vaithiyalingam6ORCID,Ramana C. V.137ORCID

Affiliation:

1. Center for Advanced Materials Research (CMR), University of Texas at El Paso, 500 W University Ave, El Paso, Texas 79968, USA

2. Department of Metallurgical, Materials, and Biomaterials Engineering, University of Texas at El Paso, 500 W University Ave, El Paso, Texas 79968, USA

3. Department of Aerospace and Mechanical Engineering, University of Texas at El Paso, 500 W University Ave, El Paso, Texas 79968, USA

4. Department of Physics, University of Texas at El Paso, 500 W University Ave, El Paso, Texas 79968, USA

5. Department of Electrical and Computer Engineering and Petersen Institute of Nano Science and Engineering, University of Pittsburgh, Pittsburgh, PA 15261, USA

6. Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, 902 Battelle Blvd, Richland, Washington 99354, USA

7. Physical and Computational Sciences Directorate (PCSD), Pacific Northwest National Laboratory (PNNL), Richland, WA 99352, USA

Abstract

The effect of oxygen partial pressure on the structure, morphology, chemical bonding, and optical properties of Ga–W–O films made by pulsed laser deposition is evaluated. Conditions were optimized to realize materials for deep UV-photodetectors.

Funder

Air Force Office of Scientific Research

Biological and Environmental Research

National Science Foundation

University of Texas at El Paso

Pacific Northwest National Laboratory

Publisher

Royal Society of Chemistry (RSC)

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