Tungsten donors doping in β-gallium oxide single crystal

Author:

Li Baizhong12ORCID,Qi Hongji13ORCID,Ahmed A. M.4ORCID,Sai Qinglin1ORCID,Pan Mingyan1ORCID,Xia Changtai1ORCID,Mohamed H. F.14

Affiliation:

1. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences 1 , Shanghai 201800, China

2. Precision Optical Manufacturing and Testing Center, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences 2 , Shanghai 201815, China

3. Hangzhou Institute of Optics and Fine Mechanics 3 , Hangzhou, Zhejiang 311421, China

4. Physics Department, Faculty of Science, Sohag University 4 , 82524 Sohag, Egypt

Abstract

Crystal structure, Raman spectra, electrical properties, and photoluminescence of unintentionally doped (UID) and W-doped β-Ga2O3 (W:β-Ga2O3) crystals grown using the optical floating zone technique were investigated. Based on the experimental data, W6+ ions substitute Ga3+ ions mainly in the octahedral lattice site, as revealed by the Raman spectroscopic assessment of W:β-Ga2O3 crystals. The carrier concentration of 0.10 mol. % W:β-Ga2O3 (3.92 × 1018 cm3) is more than forty times that of UID crystal (9.55 × 1016 cm3). In addition, the resistivity and mobility of 0.10 mol. % W: β-Ga2O3 decreased from 0.603 to 0.032 Ω cm and 153.1 to 126 cm−2 V−1 s−1, respectively. The transmittance of W:β-Ga2O3 crystals decreases with increasing W content (0.01, 0.05, and 0.10 mol. %) but remains high in the visible wavelength range. Three distinct emissions are observed in the photoluminescence spectra: two blue emissions and a UV band emission. These bands are owing to the −1 charge states of Ga(I) vacancies (VGa1−) at the octahedral site, the −1 charge states of gallium and oxygen vacancy pairs (VGa + VO)1−, as well as the recombination of self-trapped holes (STHs) are confined between two O(II)-s sites, respectively.

Funder

National Natural Science Foundation of China

Science, Technology & Innovation Funding AuthorityEgypt

Science and Technology Commission of Shanghai Municipality

Chinese Academy of Sciences President's International Fellowship Initiative

Shanghai Science and Technology Commision

International Partnership Program of Chinese Academy of Sciences

Publisher

AIP Publishing

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