Anisotropic spectroscopy of nitrogen K-edge in group-III nitrides
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1691498
Reference23 articles.
1. Measuring electronic structure of wurtzite InN using electron energy loss spectroscopy
2. Al diffusion in GaN buffer layer during the growth of GaN film
3. Electronic states in valence and conduction bands of group-III nitrides: Experiment and theory
4. Density of states, hybridization, and band-gap evolution inAlxGa1−xNalloys
5. Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films
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