Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications-Reference-Cited by-同舟云学术

Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications

Published:2021-11-18 Issue:49 Volume:13 Page:59440-59449
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Moon Seokho¹^ORCID,Chang Sung-Jae²,Kim Youngjae³^ORCID,Okello Odongo Francis Ngome¹,Kim Jiye¹,Kim Jaewon¹,Jung Hyun-Wook²,Ahn Ho-Kyun²,Kim Dong-Seok⁴,Choi Si-Young¹^ORCID,Lee JaeDong³,Lim Jong-Won²,Kim Jong Kyu¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang 37673, Republic of Korea

2. DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea

3. Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno jungang-daero, Dalseong-gun, Daegu 42988, Republic of Korea

4. Korea Multi-Purpose Accelerator Complex, Korea Atomic Energy Research Institute (KAERI), 181 Mirae-ro, Geoncheon-eup, Gyeongju 38180, Republic of Korea

Funder

Samsung

Daegu Gyeongbuk Institute of Science and Technology

National Research Council of Science and Technology

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c15970