Conformal Growth of Hexagonal Boron Nitride on High-Aspect-Ratio Silicon-Based Nanotrenches-Reference-Cited by-同舟云学术

Conformal Growth of Hexagonal Boron Nitride on High-Aspect-Ratio Silicon-Based Nanotrenches

Published:2023-03-14 Issue:6 Volume:35 Page:2429-2438
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Kim Jiye¹,Doh Kyung-Yeon¹,Moon Seokho¹^ORCID,Choi Chang-Won¹^ORCID,Jeong Hokyeong¹²,Kim Jaewon¹³,Yoo Wonseok⁴,Park Kyungwook⁴,Chong Kyeongock⁴,Chung Chunhyng⁴,Choi Hanmei⁴,Choi Si-Young¹^ORCID,Lee Donghwa¹^ORCID,Kim Jong Kyu¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea

2. Memory Thin Film Technology Team, Hwaseong Campus, Samsung Electronics Co. LTD, 1 Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea

3. Samsung Advanced Institute of Technology (SAIT), 129, Samsung-ro 320 Beon-gil, Yeongtong-gu, Suwon-si, Gyeonggi-do 16706, Republic of Korea

4. DRAM Process Development, Semiconductor R&D Center, Samsung Electronics Co. LTD, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea

Funder

Samsung

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Electronics and Telecommunications Research Institute

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.2c03568

Reference46 articles.