Dielectric Breakdown in Single-Crystal Hexagonal Boron Nitride-Reference-Cited by-同舟云学术

Dielectric Breakdown in Single-Crystal Hexagonal Boron Nitride

Published:2021-08-11 Issue:8 Volume:3 Page:3547-3554
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Ranjan Alok¹^ORCID,Raghavan Nagarajan¹^ORCID,Holwill Matthew²,Watanabe Kenji³^ORCID,Taniguchi Takashi⁴^ORCID,Novoselov Kostya S.²⁵,Pey Kin Leong¹^ORCID,O’Shea Sean J.⁶^ORCID

Affiliation:

1. Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore

2. Department of Physics & Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom

3. Research Centre for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

4. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

5. Department of Material Science and Engineering, National University of Singapore, Singapore 117575, Singapore

6. Agency for Science Technology and Research, Institute of Materials Research and Engineering, 2 Fusionopolis Way, Singapore 138634, Singapore

Funder

Japan Society for the Promotion of Science

National Institute for Materials Science

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00469

Reference35 articles.

1. 2D materials and van der Waals heterostructures

2. Hexagonal Boron Nitride for Sulfur Corrosion Inhibition

3. Safety Assessment of Boron Nitride as Used in Cosmetics

4. Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated optical and electron microscopy

5. Engineering and Localization of Quantum Emitters in Large Hexagonal Boron Nitride Layers

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