Van der Waals Epitaxially Grown Molecular Crystal Dielectric Sb<sub>2</sub>O<sub>3</sub> for 2D Electronics-Reference-Cited by-同舟云学术

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Van der Waals Epitaxially Grown Molecular Crystal Dielectric Sb₂O₃ for 2D Electronics

Published:2024-05-04 Issue:20 Volume:18 Page:13098-13105
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Ryu Huije¹,Kim Hyunjun¹,Jeong Jae Hwan¹^ORCID,Kim Byeong Chan¹,Watanabe Kenji²^ORCID,Taniguchi Takashi³^ORCID,Lee Gwan-Hyoung¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea

2. Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

3. Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Funder

Samsung

Samsung Advanced Institute of Technology

Ministry of Education, Culture, Sports, Science and Technology

National Research Foundation of Korea

Japan Society for the Promotion of Science

Seoul National University

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.4c01883

Reference40 articles.

1. Boron nitride substrates for high-quality graphene electronics

2. Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric

3. A single-crystalline native dielectric for two-dimensional semiconductors with an equivalent oxide thickness below 0.5 nm

4. Gate Dielectrics Integration for 2D Electronics: Challenges, Advances, and Outlook

5. Single-crystalline van der Waals layered dielectric with high dielectric constant

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