Electronic states in valence and conduction bands of group-III nitrides: Experiment and theory-Reference-Cited by-同舟云学术

Electronic states in valence and conduction bands of group-III nitrides: Experiment and theory

Published:2000-06-15 Issue:24 Volume:61 Page:16623-16632
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lawniczak-Jablonska K.,Suski T.,Gorczyca I.,Christensen N. E.,Attenkofer K. E.,Perera R. C. C.,Gullikson E. M.,Underwood J. H.,Ederer D. L.,Liliental Weber Z.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.16623/fulltext

Reference29 articles.

1. GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Electronic structure of defects and impurities in III-V nitrides: Vacancies in cubic boron nitride

4. Boron Nitride Nanotubes with Reduced Numbers of Layers Synthesized by Arc Discharge

5. Morphology and X-Ray Diffraction Peak Widths of Aluminum Nitride Single Crystals Prepared by the Sublimation Method

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