In situ measurements of GaN nucleation layer decompostion
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1555264
Reference13 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. The Effect of Self Nucleation Layers on the Mocvd Growth of Gallium Nitride on Sapphire
3. GaN Growth Using GaN Buffer Layer
4. The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition
5. Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire
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