Influence of dislocations on the thermal decomposition of GaN
Author:
Funder
National Key R&D Program of China
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference10 articles.
1. GaN Schottky barrier diodes on free-standing GaN wafer;Liu;ECS J. Solid State,2017
2. Surface treatments toward obtaining clean GaN(0001) from commercial hydride vapor phase epitaxy and metal-organic chemical vapor deposition substrates in ultrahigh vacuum;Hattori;Appl Surf Sci,2010
3. Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures;Zhang;J. Crystal Growth,2017
4. Dislocation movement in GaN films;Moram;Appl. Phys. Lett.,2010
5. Heteroepitaxial thermal gradient solution growth of GAN;Logan;J. Electrochem. Soc.,1972
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