Dislocation movement in GaN films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3532965
Reference23 articles.
1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
2. Effect of threading defects on InGaN∕GaN multiple quantum well light emitting diodes
3. UV Light-Emitting Diode Fabricated on Hetero-ELO-Grown Al0.22Ga0.78N with Low Dislocation Density
4. Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE
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4. Effect of carbon impurity on the dislocation climb in epitaxial GaN on Si substrates;Applied Physics Express;2022-09-09
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