The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355740
Reference18 articles.
1. Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates
2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
3. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
4. The Effect of Self Nucleation Layers on the Mocvd Growth of Gallium Nitride on Sapphire
5. GaN Growth Using GaN Buffer Layer
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