Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire-Reference-Cited by-同舟云学术

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Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire

Published:1996-03-01 Issue:Part 2, No. 3A Volume:35 Page:L285-L288
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Keller Stacia,Kapolnek David,Keller Bernd P.,Wu Yifeng,Heying Benjamin,Speck James S.,Mishra Umesh K.,Denbaars Steven P.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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