Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102212
Reference23 articles.
1. Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs
2. Photoconductivity effects in extremely high mobility modulation‐doped (Al,Ga)As/GaAs heterostructures
3. On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures
4. Defects in epitaxial multilayers
5. Growth and characterization of AlGaAs/InGaAs/GaAs pseudomorphic structures
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1. Retraction: “Dependence of structural and optical properties of In0.23Ga0.77As/GaAs quantum wells on misfit dislocations: Different critical thickness for dislocation generation and degradation of optical properties” [J. Vac. Sci. Technol. B 8, 751–757 (1990)];Journal of Vacuum Science & Technology B;2023-11-20
2. Anisotropic distribution of microstructure in compressively strained InP/GaAs epitaxial layers;Superlattices and Microstructures;2018-10
3. Tilt investigation of In(Al,Ga)As metamorphic buffer layers on GaAs (001) substrate: A novel technique for tilt determination;Crystal Research and Technology;2016-11-23
4. Observation of anisotropic distribution of microstructure in GaP/GaAs epitaxial layers;Journal of Applied Physics;2016-10-07
5. Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2016-07
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