Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells-Reference-Cited by-同舟云学术

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Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells

Published:2016-07 Issue: Volume:81 Page:240-247
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Yu Jinling,Cheng Shuying,Lai Yunfeng,Zheng Qiao,Chen Yonghai,Ren Jun

Funder

National Natural Science Foundation of China

973 program

Natural Science Foundation of Fujian

Open Research Fund Program

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry;Ye;Mater. Sci. Eng. B.-Adv.,2002

2. Surface segregation of In atoms during molecular-beam epitaxy and its influence on the energy-levels in InGaAs/GaAs quantum-wells;Muraki;Appl. Phys. Lett.,1992

3. Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells;Disseix;Phys. Rev. B,1997

4. Nonuniform segregation of Ga at AlAs/GaAs heterointerfaces;Braun;Phys. Rev. B,1997

5. Optical properties of InAlGaAs quantum wells;Jensen;J. Appl. Phys.,1999

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