The elimination of surface cross-hatch from relaxed, limited-area Si1−xGex buffer layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120105
Reference13 articles.
1. Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices
2. Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures
3. Room‐temperature electron mobility in strained Si/SiGe heterostructures
4. Surface morphology of related GexSi1−xfilms
5. On the nature of cross‐hatch patterns on compositionally graded Si1−xGexalloy layers
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