On the nature of cross‐hatch patterns on compositionally graded Si1−xGexalloy layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111287
Reference7 articles.
1. Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices
2. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
3. Solid phase epitaxy of relaxed, implantation‐amorphized Si1−xGexalloy layers grown on compositionally graded buffers
4. Surface morphology of related GexSi1−xfilms
5. z calibration of the atomic force microscope by means of a pyramidal tip
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