Solid phase epitaxy of relaxed, implantation‐amorphized Si1−xGexalloy layers grown on compositionally graded buffers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110125
Reference16 articles.
1. Dislocations in strained-layer epitaxy: theory, experiment, and applications
2. Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices
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4. Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si
5. Kinetics of solid phase crystallization in amorphous silicon
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