An atomistic investigation of the composition dependence in SiGe alloys during Solid Phase Epitaxial Regrowth-Reference-Cited by-同舟云学术

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An atomistic investigation of the composition dependence in SiGe alloys during Solid Phase Epitaxial Regrowth

Published:2016-03 Issue: Volume:106 Page:290-294
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Payet Anthony,Sklénard Benoît,Barbé Jean-Charles,Batude Perrine,Tavernier Clément,Gergaud Patrice,Martin-Bragado Ignacio

Funder

COMPOSE3 FP7-ICT European project

Spanish Ministry of Economy and Competitiveness

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si;Csepregi;J. Appl. Phys.,1978

2. Kinetics of solid phase crystallization in amorphous silicon;Olson;Mat. Sci. Rep.,1988

3. The mechanism of solid phase epitaxy;Aziz,1992

4. Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals;Csepregi;Solid State Commun.,1977

5. Intrinsic and dopant-enhanced solid-phase epitaxy in amorphous germanium;Johnson;Phys. Rev. B,2008

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomistic modeling of the Ge composition dependence of solid phase epitaxial regrowth in SiGe alloys;Journal of Applied Physics;2017-09-14

2. Multiscale modeling of doping processes in advanced semiconductor devices;Materials Science in Semiconductor Processing;2017-05

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