Broad defect depth distribution in germanium substrates induced by CF4 plasma
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4815925
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1. Vertically-stacked gate-all-around polysilicon nanowire FETs with sub-μm gates patterned by nanostencil lithography
2. Silicon Nanowire All-Around Gate MOSFETs Built on a Bulk Substrate by All Plasma-Etching Routes
3. A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation
4. Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices
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1. Radical-controlled plasma processes;Reviews of Modern Plasma Physics;2022-11-10
2. (Invited) Challenges for Etch Technology and the Integration of New Channel Materials Beyond 7 nm;ECS Transactions;2017-04-27
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4. Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate;Journal of Applied Physics;2014-05-07
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