Parametric study on optical properties of digital-alloy In(Ga1−zAlz)As/InP grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1645666
Reference13 articles.
1. Effects of rapid thermal annealing on the optical properties of 1.3 μm InGaAlAs multiquantum wells grown by digital-alloy molecular-beam epitaxy
2. 1.58-μm lattice-matched and strained digital alloy AlGaInAs-InP multiple-quantum-well lasers
3. Barrier-width dependence of emission in triple-quantum-well broadband light-emitting diodes
4. Strained 1.3 [micro sign]m MQW AlGaInAs lasers grown by digital alloy MBE
5. Molecular-beam epitaxy growth of high-quality active regions with strained InxGa1−xAs quantum wells and lattice-matched AlxGayIn(1−x−y)As barriers using submonolayer superlattices
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1. Enhanced mobility of ternary InGaAs quantum wells through digital alloying;Physical Review Materials;2024-06-26
2. Modeling and experimental demonstration of short-wavelength carrier collection enhancement in Ga0.51In0.49P solar cells using graded (AlzGa1-z)xIn1-xP window-emitter structures;Solar Energy Materials and Solar Cells;2019-11
3. 2.1 μm InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers;Superlattices and Microstructures;2019-06
4. Temperature-dependent Luminescence Properties of Digital-alloy In(Ga1−zAlz)As;Applied Science and Convergence Technology;2018-05-31
5. Luminescence properties and mechanisms of optical transitions in digital-alloy InGaAlAs;Thin Solid Films;2017-08
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