Effects of rapid thermal annealing on the optical properties of 1.3 μm InGaAlAs multiquantum wells grown by digital-alloy molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1485132
Reference12 articles.
1. High-performance uncooled 1.3-μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications
2. AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy
3. MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP
4. Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0=
5. Refractive indexes of (Al,Ga,In)As epilayers on InP for optoelectronic applications
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2. A comparative study of analog, digital, and linear alloy technique on the strain and optical properties of symmetrical InGaAs/InAs/InGaAs quantum dot-in-a-well (DWELL) heterostructure;Photonic and Phononic Properties of Engineered Nanostructures XII;2022-03-05
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