A comparative study of analog, digital, and linear alloy technique on the strain and optical properties of symmetrical InGaAs/InAs/InGaAs quantum dot-in-a-well (DWELL) heterostructure-Reference-Cited by-同舟云学术

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A comparative study of analog, digital, and linear alloy technique on the strain and optical properties of symmetrical InGaAs/InAs/InGaAs quantum dot-in-a-well (DWELL) heterostructure

Published:2022-03-05 Issue: Volume: Page:
ISSN:
Container-title:Photonic and Phononic Properties of Engineered Nanostructures XII
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Author:

Kumar Ajay,Kumar Ravindra,Prabhu Sudheendra,Chakrabarti Subhananda

Publisher

SPIE

Reference17 articles.

1. High-performance mid-infrared quantum dot infrared photodetectors

2. Theoretical correlation and effect of annealing on the photoresponse of vertically strain-coupled In0.5Ga0.5As/GaAs quantum dot heterostructures

3. Carrier generation and transport in InGaAs/GaAs multiple quantum well solar cells.;Yazawa,1994

4. Semiconductor self-assembled quantum dots: Present status and future trends.;Petroff,2011

5. Improving the operating temperature of quantum dots-in-a-well detectors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of linear alloy on strain coupled bilayer InAs/GaAs1-ySby quantum dot heterostructures;Physics and Simulation of Optoelectronic Devices XXXI;2023-03-10

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