Theoretical correlation and effect of annealing on the photoresponse of vertically strain-coupled In0.5Ga0.5As/GaAs quantum dot heterostructures
Author:
Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, Maharashtra 400076, India
2. Centre for Research in Nanotechnology and Science, Indian Institute of Technology Bombay, Mumbai, Maharashtra 400076, India
Funder
DST Nanomission
SERB DST
DST SERI
Indian Space Research Organisation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5113528
Reference17 articles.
1. Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector
2. Absorption, carrier lifetime, and gain in inas~gaas quantum-dot infrared photodetectors
3. Quantum dot lasers: breakthrough in optoelectronics
4. Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dots
5. Quantum-dot infrared photodetectors: Status and outlook
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