Improvement in Performance of InAs Surface Quantum Dot Heterostructure-Based H<sub>2</sub>S Gas Sensor by Introducing Buried Quantum Dot Layer-Reference-Cited by-同舟云学术

Improvement in Performance of InAs Surface Quantum Dot Heterostructure-Based H₂S Gas Sensor by Introducing Buried Quantum Dot Layer

Published:2023-07-15 Issue:14 Volume:23 Page:15369-15375
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Mantri Manas Ranjan¹^ORCID,Panda Debi Prasad²^ORCID,Punetha Deepak¹^ORCID,Pandey Sushil Kumar³^ORCID,Singh Vivek Pratap⁴,Pandey Saurabh Kumar⁴^ORCID,Chakrabarti Subhananda¹^ORCID

Affiliation:

1. Electrical Engineering Department, Indian Institute of Technology Bombay, Mumbai, India

2. Atomic, Molecular and Optical Physics Division, Physical Research Laboratory, Ahmedabad, India

3. Department of Electronics and Communication Engineering, National Institute of Technology Karnataka, Surathkal, Mangalore, India

4. Department of Electrical Engineering, Sensor and Optoelectronics Research Group (SORG), Indian Institute of Technology Patna, Patna, Bihar, India

Funder

Department of Science and Technology (DST) Nano Mission

Science and Engineering Research Board

DST-Solar Energy Research Initiative

Indian Space Research Organization

Abdul Kalam Technology Innovation National Fellowship

DST India through the DST-INSPIRE Faculty Fellowship Scheme

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/7361/10183770/10121633.pdf?arnumber=10121633

Reference33 articles.

1. Self-assembled InAs quantum dots on GaSb/GaAs(001) layers by molecular beam epitaxy

2. Optimizing the spacer layer thickness of vertically stacked InAs/GaAs quantum dots

3. Optical Studies of Individual InAs Quantum Dots in GaAs: Few-Particle Effects

4. Theoretical correlation and effect of annealing on the photoresponse of vertically strain-coupled In0.5Ga0.5As/GaAs quantum dot heterostructures