Molecular-beam epitaxy growth of high-quality active regions with strained InxGa1−xAs quantum wells and lattice-matched AlxGayIn(1−x−y)As barriers using submonolayer superlattices-Reference-Cited by-同舟云学术

Molecular-beam epitaxy growth of high-quality active regions with strained InxGa1−xAs quantum wells and lattice-matched AlxGayIn(1−x−y)As barriers using submonolayer superlattices

Published:2002-05-13 Issue:19 Volume:80 Page:3509-3511
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Reddy M. H. M.,Huntington A.,Buell D.,Koda R.,Hall E.,Coldren L. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1474598

Reference6 articles.

1. An optimized digital alloy growth technique for accurate band gap engineering

2. Surface morphology of GaSb grown on (111)B GaAs by molecular beam epitaxy

3. Strain-dependent morphology of spontaneous lateral composition modulations in (AlAs)m(InAs)n short-period superlattices grown by molecular beam epitaxy

4. High electron mobility in (InAs)n(GaAs)n short period superlattices grown by MOVPE for high-electron mobility transistor structure

5. High-quality highly strained InGaAs quantum wells grown on InP using (InAs)n(GaAs)0.25 fractional monolayer superlattices

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. True hero of the trade: On the critical contributions of Art Gossard to modern device technology;Journal of Vacuum Science & Technology A;2021-03

2. Design and Fabrication of 1.35-$\mu{\rm m}$ Laser Diodes With Full Digital-Alloy InGaAlAs MQW;IEEE Journal of Quantum Electronics;2013-01

3. Electronic states and interband transitions of strained In z Ga x Al1−z−x P/In0.5Al0.5P multiple quantum wells;Journal of the Korean Physical Society;2012-11

4. Effect of Temperature on Optical and Electronic Properties of InGaP/InGaAlP Multiple Quantum Wells;Journal of Nanoscience and Nanotechnology;2012-07-01

5. Raman Studies of InGaAlAs Digital Alloys;Journal of the Korean Physical Society;2011-10-14