High-quality highly strained InGaAs quantum wells grown on InP using (InAs)n(GaAs)0.25 fractional monolayer superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124328
Reference12 articles.
1. InGaAs/InGaAsp/InP strained-layer quantum well lasers at ~2 μm
2. Room-temperature 2.2-μm InAs-InGaAs-InP highly strained multiquantum-well lasers grown by gas-source molecular beam epitaxy
3. High quantum efficiency, long wavelength InP/InGaAs microcavity photodiode
4. Elastic state and thermodynamical properties of inhomogeneous epitaxial layers: Application to immiscible III‐V alloys
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