Strain-dependent morphology of spontaneous lateral composition modulations in (AlAs)m(InAs)n short-period superlattices grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Strain-dependent morphology of spontaneous lateral composition modulations in (AlAs)m(InAs)n short-period superlattices grown by molecular beam epitaxy

Published:1998-09-28 Issue:13 Volume:73 Page:1844-1846
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Norman A. G.,Ahrenkiel S. P.,Moutinho H.,Al-Jassim M. M.,Mascarenhas A.,Mirecki Millunchick J.,Lee S. R.,Twesten R. D.,Follstaedt D. M.,Reno J. L.,Jones E. D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.122301

Reference14 articles.

1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

2. Formation of lateral quantum wells in vertical short‐period superlattices by strain‐induced lateral‐layer ordering process

3. Interface morphology development during stress corrosion cracking: Part I. Via surface diffusion

4. Stress singularities along a cycloid rough surface

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Large redshift in photoluminescence of InAs/AlAs short-period superlattices due to highly ordered lateral composition modulation;Journal of Vacuum Science & Technology A;2023-06-06

2. True hero of the trade: On the critical contributions of Art Gossard to modern device technology;Journal of Vacuum Science & Technology A;2021-03

3. Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices;AIP Advances;2017-07

4. A binary phase field crystal study for phase segregation of liquid phase heteroepitaxial growth;Computational Materials Science;2016-10

5. A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(100);Journal of Crystal Growth;2015-05